AOS新一代PairFET™产品系列产品 高散热易布局

AOS AOE6930集成了上管7mR和下管1.05mR并且用业界最先进的DFN5*6 XspairFET封装，主要为大功率Vcore和CPU线路应用。 新的封装直接把下管的源极连接到裸漏的散热片去散热，而且这样可以帮助工程师更容易布局地线。下管提供1.05mR的超低内阻可以帮助客户获得更好效率提升，温度的改善。

AOE6930 has integrated high-side and low-side MOSFETs, with 7mR and 1.05mR maximum Rds(on) respectively, within a 5mm*6mm XspairFET package, The low-side MOSFET source is connected to the exposed pad directly, which can easily be connected to the ground plane in PCB design. The device gives over all efficiency designers a significant benefit in enhancing the thermal dissipation. The device gives over all efficiency improvement and reduces the temperature rise in comparison with the current solutions found in the market.

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