ICE20N65 Data Sheet rev3 - ver__ 97 ICE20N65 N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on)
• Ultra Low Gate Charge
• High dV/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
联系方式，１３７２８８０９６３０，价格实惠，ＰＩ，长城，康佳都在大量使用，交货周期快，１－２周，相比ＩＲ，ＳＴ快很多，性能绝对保证．
ＱＱ1587856321
