新手关于单端反激的问题(内含详细设计和电压电流波形图片)

设计输出功率为12W,输入电压12V,输出电压12V,输出电流为1A,负载为10欧电阻,使用磁芯型号未知,材料为非晶合金,原边12圈,副边开气隙5mm缠了21圈,由于安装需要,开了5mm的气隙.使用IRF530N做为MOS,结构为他激式固定占空比单端反激,无反馈(由于安装问题).
实际输出电压6V.
这是电路图.
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这是10欧负载IRF开关管电压,量程10V

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这是10欧负载IRF原边电流,量程2A


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这是10欧负载IRF副边电压,量程10V


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这是10欧负载IRF副边电流,量程1A


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这是空载IRF开关管电压,量程10V


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这是空载IRF原边电流,量程1A


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这是空载IRF副边电压,量程10V

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这是空载IRF副边电流,量程1A



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问题1:555出来的频率超过100kHZ之后555发热严重,效率反而降低
问题2:无论空载还是负载,MOS发热严重.
问题3:效率很低,输入功率为17.25W(计算得),输出直流电压为6V,功率为3.6W.

下面为采用TOP223Y的电路图


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这是10欧负载TOP开关管电压 ,量程10V


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这是10欧负载TOP原边电流,量程1A


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这是10欧负载TOP副边电压,量程10V(量的时候正负反向了)



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这是10欧负载TOP副边电流,量程1A


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也是同样问题,麻烦各位看看,互相学习学习,多谢
问题1:555出来的频率超过100kHZ之后555发热严重,效率反而降低
问题2:无论空载还是负载,TOP发热严重.
问题3:效率很低