Input Conditions;(90Vac-264Vac)
Vin(min)=90(Volt,90Vac=127Vdc,127Vdc-40Vdc=90Vdc)
Don(max)=0.45
Frequency=f(Hz=10的负三次方KHz)
Vo=x(Volt)
Io=y(Amp)
Ip(limit)=a(Amp,refer to control IC specification)
Ae=z
Bmax=2500Gauss
Efficiency=0.75
Vf1=0.5(Volt,Schottky Diode forward voltage drop)
Vcc=12(Volt)
Vf2=0.7(Volt,FR Diode forward voltage drop)
Output Results
1.Np=[Vin(min)*Don(max)]/[Bmax*Ae*f](Turn)
2.Ip(Limit)*70%=Ip(max)(Amp)
3.Pin=Po/效率=(1/2)*Lp(max)平方*f(Watts)
4.Lp=Pin/[2*Ip(max)平方*f](H)
5.Np/Ns=[Vin(min)*Don(max)]/{(Vo+V1)*[1-Don(max)]}=Tps,Ns=Np/Tps(Turn)
6.Nvcc={Np*(Vcc+Vf2)*[1-Don(max)]}/[Vin(min)*Don(max)](Turn)
Remarks:
Design procedure for PWM+MOS type of control IC.
以上仅供参考.如有疑问请提出大家共同探讨.