无线充电专用驱动芯片BDR2L00专用MOSVS3622/VS3640

DESCRIPTION The BDR2L00 is a single Phase MOSFET gate driver optimized to drive the gates of both high-side and low-side power MOSFETs. FEATURES Drive two N-MOSFETs High-Frequency operation (Up to 1MHz) PWM input capable of 3.3V and 5V Fast output rise time Internal bootstrap diode Adaptive shoot through protection Under-voltage lockout Internal thermal shutdown Small size package：SOP-8, DFN8(3x3) These are Pb-Free Devices The integrated bootstrap diode reduces external component count. With a wide operating voltage range, high or low side MOSFET gate drive voltage can be optimized for the best efficiency. Internal adaptive nonoverlap circuit further reduces switching losses by preventing simultaneous conduction of both MOSFETs. The UVLO circuits prevent malfunction when VCC is lower than the specified threshold voltage. 无线充电马达驱动芯片BDR2L00可兼容RT9612B