100 kHz Dual Active Bridge for 3.3kW Bi-directional Battery Charger
双向储能充电设计，逆变。3000W DAB
IntroductionDual Active Bridge (DAB) is a classic topology for bidirectionalpower conversion requiring a wide range ofvoltage transfer ratio, such as battery chargers. Anadvantage of this circuit over a CLLC topology is that it doesnot require either variable switching frequency or a variableDC-link voltage to regulate the battery voltage. However,there is one imperfection in DABs: soft switching is notavailable in some conditions. Specifically, devices areoperated in hard switching when a DAB works at either lowpower or a strong voltage transfer ratio.For DABs, Transphorm GaN FETs offer the following benefitsversus traditional Si devices:• High switching frequency and high power density• Low loss during hard switchingThese benefits are the result of Transphorm GaN attributesincluding:• Low Output Charge (Qoss)• Low Reverse Recovery Charge (Qrr)• Low Switching LossesWith GaN, DABs become more competitive than ever. Tobalance common mode impedance, four identical inductorsinstead of one inductor are used in the design. Voltageblocking capacitors are added for voltage mode control.
Converter DesignA prototype of the DAB was designed using the 50mΩ GaNFET (TPH3205WSBQA), shown in Fig. 2. The keyspecifications of the prototype are summarized below inTable 1.
更多的请直接下载资料查看
****************
