Dual P-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings @TA=25℃ unless otherwise noted
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
Drain Current (Continuous) *AC
TA=25°C
ID
-5
A
TA=70°C
-4
Drain Current (Pulse) *B
IDM
-20
A
Power Dissipation
TA=25°C
PD
-2.2
W
Operating Temperature/ Storage Temperature
TJ/TSTG
-55~150
℃
Thermal Resistance Ratings
Parameter
Symbol
Maximum
Unit
Maximum Junction-to-Ambient
t ≤ 10s
RthJA
62.5
°C/W
Features
VDS = -30V,
I D = -5A
RDS(ON) @VGS= -10V, TYP 43mΩ
RDS(ON) @VGS= -4.5V, TYP 56mΩ
General Description
• Load switch
• PWM applications.
Pin Configurations
深圳市芯美力科技有限公司
18825331528
354191130
